Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTLJF3117PTAG
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984
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ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V
NTLJF3117PT1G
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3,753
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ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN µCool™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V
NTLJF3117PT1G
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2,070
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ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN µCool™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V
NTLJF3117PT1G
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RFQ
866
In-stock
ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN µCool™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V