Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SQJ465EP-T1_GE3
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Vishay Siliconix MOSFET P-CHANNEL 60V 4.6A 8SO Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3.75W (Tc) P-Channel - 60V 4.6A (Tc) 85 mOhm @ 3.5A, 10V 2.5V @ 250µA 40nC @ 10V 1140pF @ 30V 4.5V, 10V ±20V
SQ9407EY-T1_GE3
RFQ
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3,150
In-stock
Vishay Siliconix MOSFET P-CHANNEL 60V 4.6A 8SO Automotive, AEC-Q101, TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TA) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 3.75W (Tc) P-Channel - 60V 4.6A (Tc) 85 mOhm @ 3.5A, 10V 2.5V @ 250µA 40nC @ 10V 1140pF @ 30V 4.5V, 10V ±20V