- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,375
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
2,801
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
3,913
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 31A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
1,741
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 31A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
1,696
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
744
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
2,023
In-stock
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STMicroelectronics | MOSFET N-CH 60V 30A DPAK | STripFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 60V | 30A (Tc) | 28 mOhm @ 15A, 10V | 2.5V @ 250µA | 41nC @ 5V | 2370pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
1,463
In-stock
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STMicroelectronics | MOSFET N-CH 60V 30A DPAK | STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55W (Tc) | N-Channel | - | 60V | 30A (Tc) | 28 mOhm @ 15A, 10V | 2.5V @ 250µA | 41nC @ 5V | 2370pF @ 25V | 5V, 10V | ±20V | |||
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|
VIEW |
1,934
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
3,332
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,575
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
3,657
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
|
VIEW |
790
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
