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- Series :
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- Mounting Type :
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- Power Dissipation (Max) :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,397
In-stock
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IXYS | MOSFET N-CH 55V 64A TO-252 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 13 mOhm @ 500mA, 10V | 4V @ 25µA | 37nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,647
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,829
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,660
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,708
In-stock
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IXYS | MOSFET N-CH 55V 64A TO-220 | TrenchMV™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 55V | 64A (Tc) | 13 mOhm @ 500mA, 10V | 4V @ 25µA | 37nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,180
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,485
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,550
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,069
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,217
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,197
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,771
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,164
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,008
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 80W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | |||
