Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
2,429
In-stock
Microsemi Corporation MOSFET N-CH 1200V 116A SP6 - Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 3290W (Tc) N-Channel 1200V 160A (Tc) 120 mOhm @ 58A, 10V 5V @ 20mA 1100nC @ 10V 28900pF @ 25V 10V ±30V
APTM120U10SCAVG
RFQ
VIEW
RFQ
1,716
In-stock
Microsemi Corporation MOSFET N-CH 1200V 116A SP6 POWER MOS 7® Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 3290W (Tc) N-Channel 1200V 116A (Tc) 120 mOhm @ 58A, 10V 5V @ 20mA 1100nC @ 10V 28900pF @ 25V 10V ±30V
APTM120U10SAG
RFQ
VIEW
RFQ
3,720
In-stock
Microsemi Corporation MOSFET N-CH 1200V 116A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 3290W (Tc) N-Channel 1200V 116A (Tc) 120 mOhm @ 58A, 10V 5V @ 20mA 1100nC @ 10V 28900pF @ 25V 10V ±30V
Default Photo
RFQ
VIEW
RFQ
2,920
In-stock
Microsemi Corporation MOSFET N-CH 200V 372A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 1250W (Tc) N-Channel 200V 372A (Tc) 5 mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 10V ±30V
APTM20SKM04G
RFQ
VIEW
RFQ
2,918
In-stock
Microsemi Corporation MOSFET N-CH 200V 372A SP6 - Active Bulk MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Chassis Mount SP6 1250W (Tc) N-Channel 200V 372A (Tc) 5 mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 10V ±30V