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- Rds On (Max) @ Id, Vgs :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,998
In-stock
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ON Semiconductor | MOSFET N-CH 30V 1.6A SSOT3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | N-Channel | 30V | 1.6A (Ta) | 85 mOhm @ 1.9A, 10V | 2V @ 250µA | 5nC @ 5V | 245pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,201
In-stock
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ON Semiconductor | MOSFET N-CH 30V 1.6A SSOT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | N-Channel | 30V | 1.6A (Ta) | 85 mOhm @ 1.9A, 10V | 2V @ 250µA | 5nC @ 5V | 245pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
1,669
In-stock
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ON Semiconductor | MOSFET N-CH 30V 1.6A SSOT3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | N-Channel | 30V | 1.6A (Ta) | 85 mOhm @ 1.9A, 10V | 2V @ 250µA | 5nC @ 5V | 245pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
609
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
1,322
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,935
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
714
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 2.1A MICROFOOT | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA | 4-Microfoot | 500mW (Ta) | N-Channel | 20V | - | 72 mOhm @ 1A, 4.5V | 900mV @ 250µA | 8nC @ 8V | 245pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,450
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 2.1A MICROFOOT | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA | 4-Microfoot | 500mW (Ta) | N-Channel | 20V | - | 72 mOhm @ 1A, 4.5V | 900mV @ 250µA | 8nC @ 8V | 245pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,111
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 2.1A MICROFOOT | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA | 4-Microfoot | 500mW (Ta) | N-Channel | 20V | - | 72 mOhm @ 1A, 4.5V | 900mV @ 250µA | 8nC @ 8V | 245pF @ 10V | 1.5V, 4.5V | ±8V | |||
