Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF9310PBF
RFQ
VIEW
RFQ
2,406
In-stock
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
IRFH9310TRPBF
RFQ
VIEW
RFQ
1,002
In-stock
Infineon Technologies MOSFET P-CH 30V 21A PQFN HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.1W (Ta) P-Channel - 30V 21A (Ta), 40A (Tc) 4.6 mOhm @ 21A, 10V 2.4V @ 100µA 58nC @ 4.5V 5250pF @ 15V 4.5V, 10V ±20V
IRFH9310TRPBF
RFQ
VIEW
RFQ
899
In-stock
Infineon Technologies MOSFET P-CH 30V 21A PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.1W (Ta) P-Channel - 30V 21A (Ta), 40A (Tc) 4.6 mOhm @ 21A, 10V 2.4V @ 100µA 58nC @ 4.5V 5250pF @ 15V 4.5V, 10V ±20V
IRFH9310TRPBF
RFQ
VIEW
RFQ
1,266
In-stock
Infineon Technologies MOSFET P-CH 30V 21A PQFN HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.1W (Ta) P-Channel - 30V 21A (Ta), 40A (Tc) 4.6 mOhm @ 21A, 10V 2.4V @ 100µA 58nC @ 4.5V 5250pF @ 15V 4.5V, 10V ±20V
IRF9310TRPBF
RFQ
VIEW
RFQ
3,155
In-stock
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
IRF9310TRPBF
RFQ
VIEW
RFQ
2,042
In-stock
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
IRF9310TRPBF
RFQ
VIEW
RFQ
2,519
In-stock
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
SISS27DN-T1-GE3
RFQ
VIEW
RFQ
989
In-stock
Vishay Siliconix MOSFET P-CH 30V 50A PPAK 1212-8S TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerPAK® 1212-8S (3.3x3.3) 4.8W (Ta), 57W (Tc) P-Channel - 30V 50A (Tc) 5.6 mOhm @ 15A, 10V 2.2V @ 250µA 140nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
SISS27DN-T1-GE3
RFQ
VIEW
RFQ
3,753
In-stock
Vishay Siliconix MOSFET P-CH 30V 50A PPAK 1212-8S TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerPAK® 1212-8S (3.3x3.3) 4.8W (Ta), 57W (Tc) P-Channel - 30V 50A (Tc) 5.6 mOhm @ 15A, 10V 2.2V @ 250µA 140nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
SISS27DN-T1-GE3
RFQ
VIEW
RFQ
2,325
In-stock
Vishay Siliconix MOSFET P-CH 30V 50A PPAK 1212-8S TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerPAK® 1212-8S (3.3x3.3) 4.8W (Ta), 57W (Tc) P-Channel - 30V 50A (Tc) 5.6 mOhm @ 15A, 10V 2.2V @ 250µA 140nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V