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- Technology :
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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,272
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 11.1A 8SOIC | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 100V | 11.1A (Tc) | 23 mOhm @ 15A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
906
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 11.1A 8SOIC | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 100V | 11.1A (Tc) | 23 mOhm @ 15A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
1,816
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 11.1A 8SOIC | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5.7W (Tc) | N-Channel | - | 100V | 11.1A (Tc) | 23 mOhm @ 15A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,520
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 27.8A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 35.7W (Tc) | N-Channel | - | 100V | 27.8A (Tc) | 23 mOhm @ 10A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
1,747
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 27.8A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 35.7W (Tc) | N-Channel | - | 100V | 27.8A (Tc) | 23 mOhm @ 10A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,298
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 27.8A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 35.7W (Tc) | N-Channel | - | 100V | 27.8A (Tc) | 23 mOhm @ 10A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | 900pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,164
In-stock
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EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
902
In-stock
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EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V | |||
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VIEW |
3,749
In-stock
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EPC | TRANS GAN 100V 36A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (11-Solder Bar) | - | N-Channel | - | 100V | 36A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 5mA | 9nC @ 5V | 900pF @ 50V | 5V | +6V, -4V | |||
