Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDFME3N311ZT
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ON Semiconductor MOSFET N-CH 30V 1.8A 6MICROFET PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) N-Channel Schottky Diode (Isolated) 30V 1.8A (Ta) 299 mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 75pF @ 15V 2.5V, 4.5V ±12V
FDFME3N311ZT
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1,418
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ON Semiconductor MOSFET N-CH 30V 1.8A 6MICROFET PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) N-Channel Schottky Diode (Isolated) 30V 1.8A (Ta) 299 mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 75pF @ 15V 2.5V, 4.5V ±12V
FDFME3N311ZT
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2,917
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ON Semiconductor MOSFET N-CH 30V 1.8A 6MICROFET PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) 1.4W (Ta) N-Channel Schottky Diode (Isolated) 30V 1.8A (Ta) 299 mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 75pF @ 15V 2.5V, 4.5V ±12V