Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 24A 8TSON-ADV U-MOSIV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) - N-Channel - 30V 24A (Ta) 7 mOhm @ 12A, 10V 3V @ 200µA 26nC @ 10V 1270pF @ 10V - -
TPCP8004(TE85L,F)
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1,834
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 8.3A PS-8 U-MOSIV Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel - 30V 8.3A (Ta) 8.5 mOhm @ 4.2A, 10V 2.5V @ 1mA 26nC @ 10V 1270pF @ 10V 4.5V, 10V ±20V
TPCP8004(TE85L,F)
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3,772
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 8.3A PS-8 U-MOSIV Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel - 30V 8.3A (Ta) 8.5 mOhm @ 4.2A, 10V 2.5V @ 1mA 26nC @ 10V 1270pF @ 10V 4.5V, 10V ±20V
TPCP8004(TE85L,F)
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2,620
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 8.3A PS-8 U-MOSIV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel - 30V 8.3A (Ta) 8.5 mOhm @ 4.2A, 10V 2.5V @ 1mA 26nC @ 10V 1270pF @ 10V 4.5V, 10V ±20V