Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D3Pak 220W (Tc) N-Channel 700V 65A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V 20V +25V, -10V
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 165W (Tc) N-Channel 700V 49A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V 20V +25V, -10V
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel 700V 65A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V 20V +25V, -10V