Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI1051X-T1-GE3
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RFQ
2,107
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Vishay Siliconix MOSFET P-CH 8V 1.2A SC89-6 TrenchFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SC-89-6 236mW (Ta) P-Channel 8V - 122 mOhm @ 1.2A, 4.5V 1V @ 250µA 9.45nC @ 5V 560pF @ 4V 1.5V, 4.5V ±5V
SI1051X-T1-GE3
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RFQ
745
In-stock
Vishay Siliconix MOSFET P-CH 8V 1.2A SC89-6 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SC-89-6 236mW (Ta) P-Channel 8V - 122 mOhm @ 1.2A, 4.5V 1V @ 250µA 9.45nC @ 5V 560pF @ 4V 1.5V, 4.5V ±5V
SI1051X-T1-GE3
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RFQ
3,545
In-stock
Vishay Siliconix MOSFET P-CH 8V 1.2A SC89-6 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SC-89-6 236mW (Ta) P-Channel 8V - 122 mOhm @ 1.2A, 4.5V 1V @ 250µA 9.45nC @ 5V 560pF @ 4V 1.5V, 4.5V ±5V
SI1051X-T1-E3
RFQ
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RFQ
2,003
In-stock
Vishay Siliconix MOSFET P-CH 8V 1.2A SC89-6 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SC-89-6 236mW (Ta) P-Channel 8V - 122 mOhm @ 1.2A, 4.5V 1V @ 250µA 9.45nC @ 5V 560pF @ 4V 1.5V, 4.5V ±5V