Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STMicroelectronics MOSFET N-CH 1200V 65A HIP247 - Active - SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 318W (Tc) N-Channel 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V
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STMicroelectronics MOSFET N-CH 1.2KV TO247-3 - Active Tube SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 318W (Tc) N-Channel 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V