Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Rohm Semiconductor MOSFET NCH 1.2KV 17A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 103W (Tc) N-Channel 1200V 17A (Tc) 208 mOhm @ 5A, 18V 5.6V @ 2.5mA 42nC @ 18V 398pF @ 800V 18V +22V, -4V