Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN012-60YS,115
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3,536
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Nexperia USA Inc. MOSFET N-CH 60V 59A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 89W (Tc) N-Channel - 60V 59A (Tc) 11.1 mOhm @ 15A, 10V 4V @ 1mA 28.4nC @ 10V 1685pF @ 30V 10V ±20V
PSMN012-60YS,115
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2,202
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Nexperia USA Inc. MOSFET N-CH 60V 59A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 89W (Tc) N-Channel - 60V 59A (Tc) 11.1 mOhm @ 15A, 10V 4V @ 1mA 28.4nC @ 10V 1685pF @ 30V 10V ±20V
PSMN012-60YS,115
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3,164
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Nexperia USA Inc. MOSFET N-CH 60V 59A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 89W (Tc) N-Channel - 60V 59A (Tc) 11.1 mOhm @ 15A, 10V 4V @ 1mA 28.4nC @ 10V 1685pF @ 30V 10V ±20V
TK8R2A06PL,S4X
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2,952
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 36W (Tc) N-Channel - 60V 50A (Tc) 11.4 mOhm @ 8A, 4.5V 2.5V @ 300µA 28.4nC @ 10V 1990pF @ 25V 4.5V, 10V ±20V