- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,147
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 100A LFPAK | TrenchMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 238W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.8 mOhm @ 25A, 10V | 4V @ 1mA | 73.1nC @ 10V | 5520pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,425
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 100A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 238W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.8 mOhm @ 25A, 10V | 4V @ 1mA | 73.1nC @ 10V | 5520pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,795
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 60V 100A LFPAK | TrenchMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 238W (Tc) | N-Channel | - | 60V | 100A (Tc) | 4.8 mOhm @ 25A, 10V | 4V @ 1mA | 73.1nC @ 10V | 5520pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,340
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 22.5A TDSON-8 | OptiMOS™ | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | P-Channel | - | 30V | 12A (Ta), 22.5A (Tc) | 13 mOhm @ 22.5A, 10V | 2.2V @ 150µA | 73.1nC @ 10V | 3670pF @ 15V | 10V | ±25V | |||
|
|
VIEW |
938
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 22.5A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | P-Channel | - | 30V | 12A (Ta), 22.5A (Tc) | 13 mOhm @ 22.5A, 10V | 2.2V @ 150µA | 73.1nC @ 10V | 3670pF @ 15V | 10V | ±25V | |||
|
|
VIEW |
3,922
In-stock
|
Infineon Technologies | MOSFET P-CH 30V 22.5A TDSON-8 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | P-Channel | - | 30V | 12A (Ta), 22.5A (Tc) | 13 mOhm @ 22.5A, 10V | 2.2V @ 150µA | 73.1nC @ 10V | 3670pF @ 15V | 10V | ±25V | |||
