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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	MMIX1F420N10T	RFQ VIEW	PDF RFQ	2,144 In-stock	IXYS	MOSFET N-CH 100V 334A SMPD		GigaMOS™, HiPerFET™, TrenchT2™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	24-PowerSMD, 21 Leads	24-SMPD	680W (Tc)	N-Channel	-	100V	334A (Tc)	2.6 mOhm @ 60A, 10V	5V @ 8mA	670nC @ 10V	4700pF @ 10V	10V	±20V
	IXFK420N10T	RFQ VIEW	PDF RFQ	1,120 In-stock	IXYS	MOSFET N-CH 100V 420A TO-264		GigaMOS™ HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264AA (IXFK)	1670W (Tc)	N-Channel	-	100V	420A (Tc)	2.6 mOhm @ 60A, 10V	5V @ 8mA	670nC @ 10V	47000pF @ 25V	10V	±20V
	IXFX420N10T	RFQ VIEW	PDF RFQ	2,391 In-stock	IXYS	MOSFET N-CH 100V 420A PLUS247		GigaMOS™ HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PLUS247™-3	1670W (Tc)	N-Channel	-	100V	420A (Tc)	2.6 mOhm @ 60A, 10V	5V @ 8mA	670nC @ 10V	47000pF @ 25V	10V	±20V
	IXFN420N10T	RFQ VIEW	PDF RFQ	3,656 In-stock	IXYS	MOSFET N-CH 100V 420A SOT-227		GigaMOS™ HiPerFET™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B	1070W (Tc)	N-Channel	-	100V	420A (Tc)	2.3 mOhm @ 60A, 10V	5V @ 8mA	670nC @ 10V	47000pF @ 25V	10V	±20V

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