Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH1R712MD,L1Q
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 60A 8SOP ADV U-MOSVI Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) P-Channel - 20V 60A (Tc) 1.7 mOhm @ 30A, 4.5V 1.2V @ 1mA 182nC @ 5V 10900pF @ 10V 2.5V, 4.5V ±12V
TPH1R712MD,L1Q
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676
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 60A 8SOP ADV U-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) P-Channel - 20V 60A (Tc) 1.7 mOhm @ 30A, 4.5V 1.2V @ 1mA 182nC @ 5V 10900pF @ 10V 2.5V, 4.5V ±12V
TPH1R712MD,L1Q
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RFQ
2,334
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 60A 8SOP ADV U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) P-Channel - 20V 60A (Tc) 1.7 mOhm @ 30A, 4.5V 1.2V @ 1mA 182nC @ 5V 10900pF @ 10V 2.5V, 4.5V ±12V