- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,399
In-stock
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Infineon Technologies | MOSFET N CH 40V 100A PQFN5X6 | HEXFET®, StrongIRFET™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
3,946
In-stock
|
Infineon Technologies | MOSFET N CH 40V 100A PQFN5X6 | HEXFET®, StrongIRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
1,018
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 35A DIRECTFET | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L6 | DIRECTFET L6 | 3.3W (Ta), 94W (Tc) | N-Channel | - | 40V | 35A (Ta), 184A (Tc) | 1.6 mOhm @ 109A, 10V | 4V @ 250µA | 194nC @ 10V | 7471pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,684
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 315A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L6 | DIRECTFET L6 | 3.3W (Ta), 94W (Tc) | N-Channel | - | 40V | 35A (Ta), 130A (Tc) | 1.6 mOhm @ 109A, 10V | 4V @ 250µA | 194nC @ 10V | 7471pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,810
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V PWRPAK SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 100W (Tc) | N-Channel | - | 40V | 62.5A (Ta), 100A (Tc) | 1 mOhm @ 20A, 10V | 2.2V @ 250µA | 194nC @ 10V | 8445pF @ 20V | 4.5V, 10V | +20V, -16V | |||
|
|
VIEW |
3,471
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V PWRPAK SO-8 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 100W (Tc) | N-Channel | - | 40V | 62.5A (Ta), 100A (Tc) | 1 mOhm @ 20A, 10V | 2.2V @ 250µA | 194nC @ 10V | 8445pF @ 20V | 4.5V, 10V | +20V, -16V | |||
|
|
VIEW |
3,848
In-stock
|
Vishay Siliconix | MOSFET N-CH 40V PWRPAK SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 100W (Tc) | N-Channel | - | 40V | 62.5A (Ta), 100A (Tc) | 1 mOhm @ 20A, 10V | 2.2V @ 250µA | 194nC @ 10V | 8445pF @ 20V | 4.5V, 10V | +20V, -16V | |||
|
VIEW |
2,884
In-stock
|
Infineon Technologies | MOSFET N CH 40V 100A PQFN 5X6 | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
3,365
In-stock
|
Infineon Technologies | MOSFET N CH 40V 100A PQFN 5X6 | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
2,784
In-stock
|
Infineon Technologies | MOSFET N CH 40V 100A PQFN 5X6 | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | 8-PQFN (5x6) | 156W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.4 mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | 6419pF @ 25V | 6V, 10V | ±20V | |||
