Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF5806
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Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V
IRF5806TRPBF
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2,821
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Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V
IRF5806TRPBF
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1,946
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Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V
IRF5806TRPBF
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3,236
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Infineon Technologies MOSFET P-CH 20V 4A 6-TSOP HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 Micro6™(TSOP-6) 2W (Ta) P-Channel - 20V 4A (Ta) 86 mOhm @ 4A, 4.5V 1.2V @ 250µA 11.4nC @ 4.5V 594pF @ 15V 2.5V, 4.5V ±20V