Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IXTX60N50L2
RFQ
VIEW
RFQ
806
In-stock
IXYS MOSFET N-CH 500V 60A PLUS247 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel - 500V 60A (Tc) 100 mOhm @ 30A, 10V 4.5V @ 250µA 610nC @ 10V 24000pF @ 25V 10V ±30V
IXTN60N50L2
RFQ
VIEW
RFQ
1,617
In-stock
IXYS MOSFET N-CH 500V 53A SOT-227 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 735W (Tc) N-Channel - 500V 53A (Tc) 100 mOhm @ 30A, 10V 4.5V @ 250µA 610nC @ 10V 24000pF @ 25V 10V ±30V
IXTK60N50L2
RFQ
VIEW
RFQ
1,411
In-stock
IXYS MOSFET N-CH 500V 60A TO-264 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 960W (Tc) N-Channel - 500V 60A (Tc) 100 mOhm @ 30A, 10V 4.5V @ 250µA 610nC @ 10V 24000pF @ 25V 10V ±30V