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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,436
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK CHIPFET | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 3.1W (Ta), 31W (Tc) | P-Channel | 20V | 12A (Tc) | 25 mOhm @ 5.9A, 4.5V | 1.5V @ 250µA | 42nC @ 8V | 1100pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
1,231
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK CHIPFET | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 3.1W (Ta), 31W (Tc) | P-Channel | 20V | 12A (Tc) | 25 mOhm @ 5.9A, 4.5V | 1.5V @ 250µA | 42nC @ 8V | 1100pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
1,483
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK CHIPFET | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 3.1W (Ta), 31W (Tc) | P-Channel | 20V | 12A (Tc) | 25 mOhm @ 5.9A, 4.5V | 1.5V @ 250µA | 42nC @ 8V | 1100pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
3,641
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 12A PPAK CHIPFET | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFET™ Single | PowerPAK® ChipFet Single | 3.1W (Ta), 31W (Tc) | P-Channel | 20V | 12A (Tc) | 25 mOhm @ 5.9A, 4.5V | 1.5V @ 250µA | 42nC @ 8V | 1100pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
3,098
In-stock
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Transphorm | MOSFET N-CH 650V 50A TO247 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 178W (Tc) | N-Channel | 650V | 50A (Tc) | 41 mOhm @ 32A, 8V | 2.65V @ 700µA | 42nC @ 8V | 2197pF @ 400V | 8V | ±18V | |||
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VIEW |
3,749
In-stock
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Transphorm | MOSFET N-CH 650V 35A TO247 | Automotive, AEC-Q101 | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 125W (Tc) | N-Channel | 650V | 35A (Tc) | 62 mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | 2200pF @ 400V | - | ±18V | |||
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VIEW |
755
In-stock
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Transphorm | MOSFET N-CH 650V 20A 3PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | 3-PQFN (8x8) | 96W (Tc) | N-Channel | 650V | 20A (Tc) | 130 mOhm @ 14A, 8V | 2.6V @ 300µA | 42nC @ 8V | 760pF @ 400V | 8V | ±18V | |||
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VIEW |
3,472
In-stock
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Transphorm | MOSFET N-CH 650V 36A TO247 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 125W (Tc) | N-Channel | 650V | 36A (Tc) | 60 mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | 2200pF @ 400V | 8V | ±18V | |||
