Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF6201PBF
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Infineon Technologies MOSFET N-CH 20V 27A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V
SIJH440E-T1-GE3
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Vishay Siliconix MOSFET N-CH 40V 200A POWERPAK8 TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 158W (Tc) N-Channel - 40V 200A (Tc) 0.96 mOhm @ 20A, 10V 2.3V @ 250µA 195nC @ 4.5V 20330pF @ 20V 4.5V, 10V +20V, -16V
SIJH440E-T1-GE3
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1,927
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Vishay Siliconix MOSFET N-CH 40V 200A POWERPAK8 TrenchFET® Gen IV Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 158W (Tc) N-Channel - 40V 200A (Tc) 0.96 mOhm @ 20A, 10V 2.3V @ 250µA 195nC @ 4.5V 20330pF @ 20V 4.5V, 10V +20V, -16V
SIJH440E-T1-GE3
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2,099
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Vishay Siliconix MOSFET N-CH 40V 200A POWERPAK8 TrenchFET® Gen IV Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 158W (Tc) N-Channel - 40V 200A (Tc) 0.96 mOhm @ 20A, 10V 2.3V @ 250µA 195nC @ 4.5V 20330pF @ 20V 4.5V, 10V +20V, -16V
IRF6201TRPBF
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RFQ
1,871
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Infineon Technologies MOSFET N-CH 20V 27A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V
IRF6201TRPBF
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RFQ
3,206
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Infineon Technologies MOSFET N-CH 20V 27A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V
IRF6201TRPBF
RFQ
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RFQ
3,386
In-stock
Infineon Technologies MOSFET N-CH 20V 27A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 20V 27A (Ta) 2.45 mOhm @ 27A, 4.5V 1.1V @ 100µA 195nC @ 4.5V 8555pF @ 16V 2.5V, 4.5V ±12V