Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC080P03LSGAUMA1
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Infineon Technologies MOSFET P-CH 30V 30A TDSON-8 OptiMOS™ Not For New Designs Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 89W (Tc) P-Channel - 30V 16A (Ta), 30A (Tc) 8 mOhm @ 30A, 10V 2.2V @ 250µA 122.4nC @ 10V 6140pF @ 15V 10V ±25V
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Infineon Technologies MOSFET P-CH 30V 30A TDSON-8 OptiMOS™ Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 89W (Tc) P-Channel - 30V 16A (Ta), 30A (Tc) 8 mOhm @ 30A, 10V 2.2V @ 250µA 122.4nC @ 10V 6140pF @ 15V 10V ±25V
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Infineon Technologies MOSFET P-CH 30V 30A TDSON-8 OptiMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 89W (Tc) P-Channel - 30V 16A (Ta), 30A (Tc) 8 mOhm @ 30A, 10V 2.2V @ 250µA 122.4nC @ 10V 6140pF @ 15V 10V ±25V