Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PH5525L,115
RFQ
VIEW
RFQ
2,718
In-stock
NXP USA Inc. MOSFET N-CH 25V 81.7A LFPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 62.5W (Tc) N-Channel - 25V 81.7A (Tc) 5.5 mOhm @ 25A, 10V 2.15V @ 1mA 16.6nC @ 4.5V 2150pF @ 12V 4.5V, 10V ±20V
SSM3J355R,LF
RFQ
VIEW
RFQ
2,012
In-stock
Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V
SSM3J355R,LF
RFQ
VIEW
RFQ
1,447
In-stock
Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V
SSM3J355R,LF
RFQ
VIEW
RFQ
1,045
In-stock
Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V