Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM60NB1R4CH C5G
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1,363
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 3A TO251 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 28.4W (Tc) N-Channel 600V 3A (Tc) 1.4 Ohm @ 900mA, 10V 4V @ 250µA 7.12nC @ 10V 257.3pF @ 100V 10V ±30V
TSM60NB1R4CP ROG
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2,247
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 3A TO252 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 28.4W (Tc) N-Channel 600V 3A (Tc) 1.4 Ohm @ 900mA, 10V 4V @ 250µA 7.12nC @ 10V 257.3pF @ 100V 10V ±30V
TSM60NB1R4CP ROG
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RFQ
2,537
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 3A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 28.4W (Tc) N-Channel 600V 3A (Tc) 1.4 Ohm @ 900mA, 10V 4V @ 250µA 7.12nC @ 10V 257.3pF @ 100V 10V ±30V
TSM60NB1R4CP ROG
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2,618
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 3A TO252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 28.4W (Tc) N-Channel 600V 3A (Tc) 1.4 Ohm @ 900mA, 10V 4V @ 250µA 7.12nC @ 10V 257.3pF @ 100V 10V ±30V