Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3K329R,LF
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2,647
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Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A U-MOSIII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 30V 3.5A (Ta) 126 mOhm @ 1A, 4V 1V @ 1mA 1.5nC @ 4V 123pF @ 15V 1.8V, 4V ±12V
SSM3K329R,LF
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809
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Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A U-MOSIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 30V 3.5A (Ta) 126 mOhm @ 1A, 4V 1V @ 1mA 1.5nC @ 4V 123pF @ 15V 1.8V, 4V ±12V
SSM3K329R,LF
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RFQ
2,151
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Toshiba Semiconductor and Storage MOSFET N CH 30V 3.5A 2-3Z1A U-MOSIII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 30V 3.5A (Ta) 126 mOhm @ 1A, 4V 1V @ 1mA 1.5nC @ 4V 123pF @ 15V 1.8V, 4V ±12V