Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN4R8-100BSEJ
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3,068
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Nexperia USA Inc. MOSFET N-CH 100V D2PAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 405W (Tc) N-Channel 100V 120A (Tj) 4.8 mOhm @ 25A, 10V 4V @ 1mA 278nC @ 10V 14400pF @ 50V 10V ±20V
PSMN4R8-100BSEJ
RFQ
VIEW
RFQ
1,351
In-stock
Nexperia USA Inc. MOSFET N-CH 100V D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 405W (Tc) N-Channel 100V 120A (Tj) 4.8 mOhm @ 25A, 10V 4V @ 1mA 278nC @ 10V 14400pF @ 50V 10V ±20V
PSMN4R8-100BSEJ
RFQ
VIEW
RFQ
3,296
In-stock
Nexperia USA Inc. MOSFET N-CH 100V D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 405W (Tc) N-Channel 100V 120A (Tj) 4.8 mOhm @ 25A, 10V 4V @ 1mA 278nC @ 10V 14400pF @ 50V 10V ±20V
SIHG44N65EF-GE3
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VIEW
RFQ
770
In-stock
Vishay Siliconix MOSFET N-CH 650V 46A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 417W (Tc) N-Channel 650V 46A (Tc) 73 mOhm @ 22A, 10V 4V @ 250µA 278nC @ 10V 5892pF @ 100V 10V ±30V
PSMN4R8-100PSEQ
RFQ
VIEW
RFQ
1,182
In-stock
Nexperia USA Inc. MOSFET N-CH 100V TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 405W (Tc) N-Channel 100V 120A (Tj) 5 mOhm @ 25A, 10V 4V @ 1mA 278nC @ 10V 14400pF @ 50V 10V ±20V