Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN020-150W,127
RFQ
VIEW
RFQ
2,106
In-stock
NXP USA Inc. MOSFET N-CH 150V 73A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 150V 73A (Tc) 20 mOhm @ 25A, 10V 4V @ 1mA 227nC @ 10V 9537pF @ 25V 10V ±20V
AUIRFP4568-E
RFQ
VIEW
RFQ
3,471
In-stock
Infineon Technologies MOSFET N-CH 150V 171A TO247 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD 517W (Tc) N-Channel - 150V 171A (Tc) 5.9 mOhm @ 103A, 10V 5V @ 250µA 227nC @ 10V 10470pF @ 50V 10V ±30V
AUIRFP4568
RFQ
VIEW
RFQ
1,576
In-stock
Infineon Technologies MOSFET N-CH 150V 171A AUTO HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 517W (Tc) N-Channel - 150V 171A (Tc) 5.9 mOhm @ 103A, 10V 5V @ 250µA 227nC @ 10V 10470pF @ 50V 10V ±30V
IXFK35N50
RFQ
VIEW
RFQ
793
In-stock
IXYS MOSFET N-CH 500V 35A TO-264AA HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 416W (Tc) N-Channel - 500V 35A (Tc) 150 mOhm @ 16.5A, 10V 4V @ 4mA 227nC @ 10V 5700pF @ 25V 10V ±20V
IXFK33N50
RFQ
VIEW
RFQ
2,257
In-stock
IXYS MOSFET N-CH 500V 33A TO-264AA HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 416W (Tc) N-Channel - 500V 33A (Tc) 160 mOhm @ 16.5A, 10V 4V @ 4mA 227nC @ 10V 5700pF @ 25V 10V ±20V
IXTH30N50
RFQ
VIEW
RFQ
2,784
In-stock
IXYS MOSFET N-CH 500V 30A TO-247 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 360W (Tc) N-Channel - 500V 30A (Tc) 170 mOhm @ 500mA, 10V 4V @ 250µA 227nC @ 10V 5680pF @ 25V 10V ±20V
IRFP4568PBF
RFQ
VIEW
RFQ
3,919
In-stock
Infineon Technologies MOSFET N-CH 150V 171A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 517W (Tc) N-Channel - 150V 171A (Tc) 5.9 mOhm @ 103A, 10V 5V @ 250µA 227nC @ 10V 10470pF @ 50V 10V ±30V
IPB009N03LGATMA1
RFQ
VIEW
RFQ
694
In-stock
Infineon Technologies MOSFET N-CH 30V 180A TO263-7 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 250W (Tc) N-Channel - 30V 180A (Tc) 0.95 mOhm @ 100A, 10V 2.2V @ 250µA 227nC @ 10V 25000pF @ 15V 4.5V, 10V ±20V
IPB009N03LGATMA1
RFQ
VIEW
RFQ
2,928
In-stock
Infineon Technologies MOSFET N-CH 30V 180A TO263-7 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 250W (Tc) N-Channel - 30V 180A (Tc) 0.95 mOhm @ 100A, 10V 2.2V @ 250µA 227nC @ 10V 25000pF @ 15V 4.5V, 10V ±20V
IPB009N03LGATMA1
RFQ
VIEW
RFQ
3,239
In-stock
Infineon Technologies MOSFET N-CH 30V 180A TO263-7 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 250W (Tc) N-Channel - 30V 180A (Tc) 0.95 mOhm @ 100A, 10V 2.2V @ 250µA 227nC @ 10V 25000pF @ 15V 4.5V, 10V ±20V