- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
19 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,031
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,001
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,678
In-stock
|
IXYS | MOSFET N-CH 200V 88A TO-247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 500W (Tc) | N-Channel | - | 200V | 88A (Tc) | 30 mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,354
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
,%20SC-63.jpg)
|
VIEW |
1,516
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 50A TO252AA | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 136W (Tc) | P-Channel | - | 30V | 50A (Tc) | 7 mOhm @ 20A, 10V | 2.5V @ 250µA | 146nC @ 10V | 5490pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,907
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,379
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,186
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
.jpg)
|
VIEW |
2,954
In-stock
|
IXYS | MOSFET N-CH 200V 88A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 500W (Tc) | N-Channel | - | 200V | 88A (Tc) | 30 mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,547
In-stock
|
IXYS | MOSFET N-CH 200V 88A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 500W (Tc) | N-Channel | - | 200V | 88A (Tc) | 30 mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,466
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,250
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 40A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | P-Channel | - | 30V | 40A (Tc) | 5.5 mOhm @ 15A, 10V | 2.5V @ 250µA | 146nC @ 10V | 4230pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,289
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 40A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | P-Channel | - | 30V | 40A (Tc) | 5.5 mOhm @ 15A, 10V | 2.5V @ 250µA | 146nC @ 10V | 4230pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,182
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 40A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | P-Channel | - | 30V | 40A (Tc) | 5.5 mOhm @ 15A, 10V | 2.5V @ 250µA | 146nC @ 10V | 4230pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
768
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
|
VIEW |
905
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 28A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 250W (Tc) | N-Channel | - | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | |||
|
VIEW |
3,909
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 28A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | |||
|
|
VIEW |
955
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,605
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
