- Series :
- Packaging :
- Technology :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
25 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,608
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,230
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 4.9A SOT-23 | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | - | 30V | 4.9A (Tc) | 47 mOhm @ 2A, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
2,780
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 4.9A SOT-23 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | - | 30V | 4.9A (Tc) | 47 mOhm @ 2A, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | 1.8V, 4.5V | ±8V | |||
|
|
VIEW |
3,600
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 4.9A SOT-23 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 1.9W (Tc) | N-Channel | - | 30V | 4.9A (Tc) | 47 mOhm @ 2A, 4.5V | 700mV @ 1mA | 9.3nC @ 4.5V | 445pF @ 30V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
2,828
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,075
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 17A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
VIEW |
3,251
In-stock
|
Rohm Semiconductor | MOSFET P-CH 20V 3A TSMT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | P-Channel | - | 20V | 3A (Ta) | 75 mOhm @ 3A, 4.5V | 2V @ 1mA | 9.3nC @ 4.5V | 840pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
2,967
In-stock
|
Rohm Semiconductor | MOSFET P-CH 20V 3A TSMT3 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | P-Channel | - | 20V | 3A (Ta) | 75 mOhm @ 3A, 4.5V | 2V @ 1mA | 9.3nC @ 4.5V | 840pF @ 10V | 2.5V, 4.5V | ±12V | |||
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|
VIEW |
3,095
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,334
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,553
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,719
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 400V | 8V | ±18V | |||
|
VIEW |
755
In-stock
|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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|
VIEW |
2,246
In-stock
|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
VIEW |
1,428
In-stock
|
Transphorm | MOSFET N-CH 600V 17A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
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|
VIEW |
2,306
In-stock
|
Transphorm | MOSFET N-CH 600V 9A PQFN | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PowerDFN | PQFN (8x8) | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
VIEW |
3,743
In-stock
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
VIEW |
1,102
In-stock
|
Transphorm | MOSFET N-CH 600V 9A TO220 | - | Last Time Buy | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 65W (Tc) | N-Channel | - | 600V | 9A (Tc) | 350 mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
VIEW |
2,623
In-stock
|
Transphorm | MOSFET N-CH 650V 16A PQFN | - | Active | Tube | GaNFET (Gallium Nitride) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PowerDFN | PQFN (8x8) | 81W (Tc) | N-Channel | - | 650V | 16A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
VIEW |
2,729
In-stock
|
Rohm Semiconductor | MOSFET P-CH 20V 3A TSMT3 | - | Not For New Designs | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 1W (Ta) | P-Channel | - | 20V | 3A (Ta) | 75 mOhm @ 3A, 4.5V | 2V @ 1mA | 9.3nC @ 4.5V | 840pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
|
VIEW |
2,030
In-stock
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
VIEW |
753
In-stock
|
Transphorm | MOSFET N-CH 600V 17A TO220 | - | Not For New Designs | Tube | GaNFET (Gallium Nitride) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 96W (Tc) | N-Channel | - | 600V | 17A (Tc) | 180 mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3nC @ 4.5V | 760pF @ 480V | 8V | ±18V | |||
|
|
VIEW |
2,732
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
632
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,209
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 11.9 mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | 4.5V, 10V | ±20V | |||
