Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMP3065LVT-7
RFQ
VIEW
RFQ
3,852
In-stock
Diodes Incorporated MOSFET P-CH 30V 4.9A TSOT-26 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSOT-26 1.2W (Ta) P-Channel 30V 4.9A (Ta) 42 mOhm @ 4.9A, 10V 2.1V @ 250µA 12.3nC @ 10V 587pF @ 15V 4.5V, 10V ±20V
DMP3065LVT-7
RFQ
VIEW
RFQ
2,932
In-stock
Diodes Incorporated MOSFET P-CH 30V 4.9A TSOT-26 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSOT-26 1.2W (Ta) P-Channel 30V 4.9A (Ta) 42 mOhm @ 4.9A, 10V 2.1V @ 250µA 12.3nC @ 10V 587pF @ 15V 4.5V, 10V ±20V
DMP3065LVT-7
RFQ
VIEW
RFQ
2,269
In-stock
Diodes Incorporated MOSFET P-CH 30V 4.9A TSOT-26 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSOT-26 1.2W (Ta) P-Channel 30V 4.9A (Ta) 42 mOhm @ 4.9A, 10V 2.1V @ 250µA 12.3nC @ 10V 587pF @ 15V 4.5V, 10V ±20V
TPC6109-H(TE85L,FM
RFQ
VIEW
RFQ
685
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 30V 5A VS-6 U-MOSIII-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) P-Channel 30V 5A (Ta) 59 mOhm @ 2.5A, 10V 1.2V @ 200µA 12.3nC @ 10V 490pF @ 10V 4.5V, 10V ±20V
TPC6109-H(TE85L,FM
RFQ
VIEW
RFQ
1,096
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 30V 5A VS-6 U-MOSIII-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) P-Channel 30V 5A (Ta) 59 mOhm @ 2.5A, 10V 1.2V @ 200µA 12.3nC @ 10V 490pF @ 10V 4.5V, 10V ±20V
TPC6109-H(TE85L,FM
RFQ
VIEW
RFQ
3,527
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 30V 5A VS-6 U-MOSIII-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) P-Channel 30V 5A (Ta) 59 mOhm @ 2.5A, 10V 1.2V @ 200µA 12.3nC @ 10V 490pF @ 10V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
736
In-stock
Diodes Incorporated MOSFET N-CH 60V 4.1A SOT89-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA SOT-89-3 2.1W (Ta) N-Channel 60V 4.1A (Ta) 85 mOhm @ 2.5A, 10V 3V @ 250µA 12.3nC @ 10V 588pF @ 30V 4.5V, 10V ±20V
DMN6075S-13
RFQ
VIEW
RFQ
1,056
In-stock
Diodes Incorporated MOSFET N-CH 60V 2A SOT23-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) N-Channel 60V 2A (Ta) 85 mOhm @ 3.2A, 10V 3V @ 250µA 12.3nC @ 10V 606pF @ 20V 4.5V, 10V ±20V
DMN6075S-7
RFQ
VIEW
RFQ
1,065
In-stock
Diodes Incorporated MOSFET N-CH 60V 2A SOT23-3 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) N-Channel 60V 2A (Ta) 85 mOhm @ 3.2A, 10V 3V @ 250µA 12.3nC @ 10V 606pF @ 20V 4.5V, 10V ±20V
DMN6075S-7
RFQ
VIEW
RFQ
2,461
In-stock
Diodes Incorporated MOSFET N-CH 60V 2A SOT23-3 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) N-Channel 60V 2A (Ta) 85 mOhm @ 3.2A, 10V 3V @ 250µA 12.3nC @ 10V 606pF @ 20V 4.5V, 10V ±20V
DMN6075S-7
RFQ
VIEW
RFQ
1,642
In-stock
Diodes Incorporated MOSFET N-CH 60V 2A SOT23-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 800mW (Ta) N-Channel 60V 2A (Ta) 85 mOhm @ 3.2A, 10V 3V @ 250µA 12.3nC @ 10V 606pF @ 20V 4.5V, 10V ±20V
DMN6070SFCL-7
RFQ
VIEW
RFQ
882
In-stock
Diodes Incorporated MOSFET N-CH 60V 3A 6-DFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN X1-DFN1616-6 (Type E) 600mW (Ta) N-Channel 60V 3A (Ta) 85 mOhm @ 1.5A, 10V 3V @ 250µA 12.3nC @ 10V 606pF @ 20V 4V, 10V ±20V
DMN6070SFCL-7
RFQ
VIEW
RFQ
3,673
In-stock
Diodes Incorporated MOSFET N-CH 60V 3A 6-DFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN X1-DFN1616-6 (Type E) 600mW (Ta) N-Channel 60V 3A (Ta) 85 mOhm @ 1.5A, 10V 3V @ 250µA 12.3nC @ 10V 606pF @ 20V 4V, 10V ±20V
DMN6070SFCL-7
RFQ
VIEW
RFQ
635
In-stock
Diodes Incorporated MOSFET N-CH 60V 3A 6-DFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerUFDFN X1-DFN1616-6 (Type E) 600mW (Ta) N-Channel 60V 3A (Ta) 85 mOhm @ 1.5A, 10V 3V @ 250µA 12.3nC @ 10V 606pF @ 20V 4V, 10V ±20V