Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSP321PL6327HTSA1
RFQ
VIEW
RFQ
2,399
In-stock
Infineon Technologies MOSFET P-CH 100V 0.98A SOT-223 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel 100V 980mA (Tc) 900 mOhm @ 980mA, 10V 4V @ 380µA 12nC @ 10V 319pF @ 25V 10V ±20V
BSP321PH6327XTSA1
RFQ
VIEW
RFQ
3,670
In-stock
Infineon Technologies MOSFET P-CH 100V 980MA SOT223 SIPMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) P-Channel 100V 980mA (Tc) 900 mOhm @ 980mA, 10V 4V @ 380µA 12nC @ 10V 319pF @ 25V 10V ±20V
SPD04P10PGBTMA1
RFQ
VIEW
RFQ
3,485
In-stock
Infineon Technologies MOSFET P-CH 100V 4A TO252-3 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 38W (Tc) P-Channel 100V 4A (Tc) 1 Ohm @ 2.8A, 10V 4V @ 380µA 12nC @ 10V 319pF @ 25V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,806
In-stock
ON Semiconductor MOSFET N-CH 80V 166A POWER56 PowerTrench® Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN Power56 138W (Tc) N-Channel 80V 166A (Tc) 2.7 mOhm @ 68A, 10V 4V @ 380µA 84nC @ 10V 6240pF @ 40V 6V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,033
In-stock
ON Semiconductor MOSFET N-CH 80V 166A POWER56 PowerTrench® Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN Power56 138W (Tc) N-Channel 80V 166A (Tc) 2.7 mOhm @ 68A, 10V 4V @ 380µA 84nC @ 10V 6240pF @ 40V 6V, 10V ±20V