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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,008
In-stock
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Infineon Technologies | MOSFET N-CH TO263-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 278W (Tc) | N-Channel | - | 80V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | 11550pF @ 25V | 10V | ±20V | |||
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VIEW |
1,912
In-stock
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Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 278W (Tc) | N-Channel | - | 80V | 120A (Tc) | 2.8 mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | 11550pF @ 25V | 10V | ±20V | |||
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VIEW |
780
In-stock
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Infineon Technologies | MOSFET N-CH TO220-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 278W (Tc) | N-Channel | - | 80V | 120A (Tc) | 2.8 mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | 11550pF @ 25V | 10V | ±20V | |||
