- Packaging :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,896
In-stock
|
Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | - | 100V | 60A (Tc) | 12 mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
678
In-stock
|
Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | - | 100V | 60A (Tc) | 12 mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
2,564
In-stock
|
Infineon Technologies | MOSFET N-CH TO252-3 | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | 94W (Tc) | N-Channel | - | 100V | 60A (Tc) | 12 mOhm @ 60A, 10V | 2.1V @ 46µA | 49nC @ 10V | 3170pF @ 25V | 4.5V, 10V | ±16V | |||
