Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF6644TR1
RFQ
VIEW
RFQ
1,078
In-stock
Infineon Technologies MOSFET N-CH 100V DIRECTFET-MN HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
IRF6644
RFQ
VIEW
RFQ
916
In-stock
Infineon Technologies MOSFET N-CH 100V DIRECTFET-MN HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
IRF6644TR1PBF
RFQ
VIEW
RFQ
1,757
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
IRF6644TR1PBF
RFQ
VIEW
RFQ
2,107
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
IRF6644TR1PBF
RFQ
VIEW
RFQ
3,653
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
IRF6644TRPBF
RFQ
VIEW
RFQ
1,399
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
IRF6644TRPBF
RFQ
VIEW
RFQ
3,653
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V
IRF6644TRPBF
RFQ
VIEW
RFQ
3,180
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MN DIRECTFET™ MN 2.8W (Ta), 89W (Tc) N-Channel - 100V 10.3A (Ta), 60A (Tc) 13 mOhm @ 10.3A, 10V 4.8V @ 150µA 47nC @ 10V 2210pF @ 25V 10V ±20V