Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSR316PL6327HTSA1
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2,097
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Infineon Technologies MOSFET P-CH 100V 0.36A SC-59 SIPMOS® Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SC-59 500mW (Ta) P-Channel - 100V 360mA (Ta) 1.8 Ohm @ 360mA, 10V 1V @ 170µA 7nC @ 10V 165pF @ 25V 4.5V, 10V ±20V
BSR316PH6327XTSA1
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1,891
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Infineon Technologies MOSFET P-CH 100V 360MA SC-59-3 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SC-59 500mW (Tc) P-Channel - 100V 360mA (Ta) 1.8 Ohm @ 360mA, 10V 1V @ 170µA 7nC @ 10V 165pF @ 25V 4.5V, 10V ±20V
BSR316PH6327XTSA1
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RFQ
3,079
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Infineon Technologies MOSFET P-CH 100V 360MA SC-59-3 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SC-59 500mW (Tc) P-Channel - 100V 360mA (Ta) 1.8 Ohm @ 360mA, 10V 1V @ 170µA 7nC @ 10V 165pF @ 25V 4.5V, 10V ±20V
BSR316PH6327XTSA1
RFQ
VIEW
RFQ
3,418
In-stock
Infineon Technologies MOSFET P-CH 100V 360MA SC-59-3 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SC-59 500mW (Tc) P-Channel - 100V 360mA (Ta) 1.8 Ohm @ 360mA, 10V 1V @ 170µA 7nC @ 10V 165pF @ 25V 4.5V, 10V ±20V