Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH3207WS
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Transphorm MOSFET N-CH 650V 50A TO247 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 178W (Tc) N-Channel 650V 50A (Tc) 41 mOhm @ 32A, 8V 2.65V @ 700µA 42nC @ 8V 2197pF @ 400V 8V ±18V