Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 60V 3A SAWN ON FOIL OptiMOS™ Active - MOSFET (Metal Oxide) - Surface Mount Die Sawn on foil - N-Channel - 60V 3A (Tj) 100 mOhm @ 2A, 10V 2.2V @ 196µA - - 10V -
IPB016N06L3GATMA1
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821
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Infineon Technologies MOSFET N-CH 60V 180A TO263-7 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 250W (Tc) N-Channel - 60V 180A (Tc) 1.6 mOhm @ 100A, 10V 2.2V @ 196µA 166nC @ 4.5V 28000pF @ 30V 4.5V, 10V ±20V
IPB016N06L3GATMA1
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2,952
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Infineon Technologies MOSFET N-CH 60V 180A TO263-7 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 250W (Tc) N-Channel - 60V 180A (Tc) 1.6 mOhm @ 100A, 10V 2.2V @ 196µA 166nC @ 4.5V 28000pF @ 30V 4.5V, 10V ±20V
IPB016N06L3GATMA1
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620
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Infineon Technologies MOSFET N-CH 60V 180A TO263-7 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7 250W (Tc) N-Channel - 60V 180A (Tc) 1.6 mOhm @ 100A, 10V 2.2V @ 196µA 166nC @ 4.5V 28000pF @ 30V 4.5V, 10V ±20V
IPB019N06L3GATMA1
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2,088
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Infineon Technologies MOSFET N-CH 60V 120A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 250W (Tc) N-Channel - 60V 120A (Tc) 1.9 mOhm @ 100A, 10V 2.2V @ 196µA 166nC @ 4.5V 28000pF @ 30V 4.5V, 10V ±20V
IPB019N06L3GATMA1
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2,502
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Infineon Technologies MOSFET N-CH 60V 120A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 250W (Tc) N-Channel - 60V 120A (Tc) 1.9 mOhm @ 100A, 10V 2.2V @ 196µA 166nC @ 4.5V 28000pF @ 30V 4.5V, 10V ±20V
IPB019N06L3GATMA1
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3,316
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Infineon Technologies MOSFET N-CH 60V 120A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 250W (Tc) N-Channel - 60V 120A (Tc) 1.9 mOhm @ 100A, 10V 2.2V @ 196µA 166nC @ 4.5V 28000pF @ 30V 4.5V, 10V ±20V