Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP220N80
RFQ
VIEW
RFQ
2,810
In-stock
ON Semiconductor MOSFET N-CH 800V 23A SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 278W (Tc) N-Channel - 800V 23A (Tc) 220 mOhm @ 11.5A, 10V 4.5V @ 2.3mA 105nC @ 10V 4560pF @ 100V 10V ±20V
FCPF220N80
RFQ
VIEW
RFQ
3,639
In-stock
ON Semiconductor MOSFET N-CH 800V 23A TO220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 44W (Tc) N-Channel - 800V 23A (Tc) 220 mOhm @ 11.5A, 10V 4.5V @ 2.3mA 105nC @ 10V 4560pF @ 100V 10V ±20V