Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSZ180P03NS3EGATMA1
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Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 40W (Tc) P-Channel - 30V 9A (Ta), 39.5A (Tc) 18 mOhm @ 20A, 10V 3.1V @ 48µA 30nC @ 10V 2220pF @ 15V 6V, 10V ±25V
BSZ180P03NS3EGATMA1
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959
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Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 40W (Tc) P-Channel - 30V 9A (Ta), 39.5A (Tc) 18 mOhm @ 20A, 10V 3.1V @ 48µA 30nC @ 10V 2220pF @ 15V 6V, 10V ±25V
BSZ180P03NS3EGATMA1
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3,886
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Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 40W (Tc) P-Channel - 30V 9A (Ta), 39.5A (Tc) 18 mOhm @ 20A, 10V 3.1V @ 48µA 30nC @ 10V 2220pF @ 15V 6V, 10V ±25V
BSZ180P03NS3GATMA1
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3,001
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Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 40W (Tc) P-Channel - 30V 9A (Ta), 39.6A (Tc) 18 mOhm @ 20A, 10V 3.1V @ 48µA 30nC @ 10V 2220pF @ 15V 6V, 10V ±25V