Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCPF125N65S3
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748
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ON Semiconductor MOSFET N-CH 650V 24A TO220F SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel 650V 24A (Tc) 125 mOhm @ 12A, 10V 4.5V @ 2.4mA 44nC @ 10V 1790pF @ 400V 10V ±30V
FCP125N65S3
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2,689
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ON Semiconductor MOSFET N-CH 650V 125MOHM TO220 SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 181W (Tc) N-Channel 650V 24A (Tc) 125 mOhm @ 12A, 10V 4.5V @ 2.4mA 46nC @ 10V 1940pF @ 400V 10V ±30V
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734
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ON Semiconductor SUPERFET3 650V TO247 PKG SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 181W (Tc) N-Channel 650V 24A (Tc) 125 mOhm @ 12A, 10V 4.5V @ 2.4mA 46nC @ 10V 1940pF @ 400V 10V ±30V
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3,018
In-stock
ON Semiconductor SUPERFET3 650V TO220 PKG SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 181W (Tc) N-Channel 650V 24A (Tc) 125 mOhm @ 12A, 10V 4.5V @ 2.4mA 46nC @ 10V 1940pF @ 400V 10V ±30V