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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK7A60W5,S5VX	RFQ VIEW	PDF RFQ	3,434 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7A TO-220SIS		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	600V	7A (Ta)	650 mOhm @ 3.5A, 10V	4.5V @ 350µA	16nC @ 10V	490pF @ 300V	10V	±30V
	TK7P60W5,RVQ	RFQ VIEW	PDF RFQ	696 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7A DPAK		DTMOSIV	Active	Digi-Reel®	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	Super Junction	600V	7A (Ta)	670 mOhm @ 3.5A, 10V	4.5V @ 350µA	16nC @ 10V	490pF @ 300V	10V	±30V
	TK7P60W5,RVQ	RFQ VIEW	PDF RFQ	1,746 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7A DPAK		DTMOSIV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	Super Junction	600V	7A (Ta)	670 mOhm @ 3.5A, 10V	4.5V @ 350µA	16nC @ 10V	490pF @ 300V	10V	±30V
	TK7P60W5,RVQ	RFQ VIEW	PDF RFQ	742 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 7A DPAK		DTMOSIV	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	60W (Tc)	N-Channel	Super Junction	600V	7A (Ta)	670 mOhm @ 3.5A, 10V	4.5V @ 350µA	16nC @ 10V	490pF @ 300V	10V	±30V

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