Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC200P03LSGAUMA1
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2,155
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Infineon Technologies MOSFET P-CH 30V 12.5A TDSON-8 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 63W (Tc) P-Channel - 30V 9.9A (Ta), 12.5A (Tc) 20 mOhm @ 12.5A, 10V 2.2V @ 100µA 48.5nC @ 10V 2430pF @ 15V 10V ±25V
BSC200P03LSGAUMA1
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2,563
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Infineon Technologies MOSFET P-CH 30V 12.5A TDSON-8 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 63W (Tc) P-Channel - 30V 9.9A (Ta), 12.5A (Tc) 20 mOhm @ 12.5A, 10V 2.2V @ 100µA 48.5nC @ 10V 2430pF @ 15V 10V ±25V
BSC200P03LSGAUMA1
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1,927
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Infineon Technologies MOSFET P-CH 30V 12.5A TDSON-8 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 63W (Tc) P-Channel - 30V 9.9A (Ta), 12.5A (Tc) 20 mOhm @ 12.5A, 10V 2.2V @ 100µA 48.5nC @ 10V 2430pF @ 15V 10V ±25V
IRLB8314PBF
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1,937
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Infineon Technologies MOSFET N-CH 30V 184A TO220 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220-3 125W (Tc) N-Channel - 30V 130A (Tc) 2.4 mOhm @ 68A, 10V 2.2V @ 100µA 60nC @ 4.5V 5050pF @ 15V 4.5V, 10V ±20V
IRFR8314TRPBF
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3,952
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Infineon Technologies MOSFET N-CH 30V 179A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 125W (Tc) N-Channel - 30V 90A (Tc) 2.2 mOhm @ 90A, 10V 2.2V @ 100µA 54nC @ 4.5V 4945pF @ 15V 4.5V, 10V ±20V
IRFR8314TRPBF
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RFQ
3,805
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Infineon Technologies MOSFET N-CH 30V 179A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 125W (Tc) N-Channel - 30V 90A (Tc) 2.2 mOhm @ 90A, 10V 2.2V @ 100µA 54nC @ 4.5V 4945pF @ 15V 4.5V, 10V ±20V
IRFR8314TRPBF
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RFQ
3,691
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Infineon Technologies MOSFET N-CH 30V 179A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 125W (Tc) N-Channel - 30V 90A (Tc) 2.2 mOhm @ 90A, 10V 2.2V @ 100µA 54nC @ 4.5V 4945pF @ 15V 4.5V, 10V ±20V