- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
649
In-stock
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IXYS | MOSFET N-CH 600V 15A ISOPLUS220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ | - | N-Channel | Super Junction | 600V | 15A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 900µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
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VIEW |
2,337
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,536
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 17.3A T0247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 650V | 17.3A (Ta) | 200 mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
