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| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,379
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 104W (Tc) | N-Channel | - | 30V | 80A (Tc) | 1.2 mOhm @ 80A, 10V | 10V @ 10µA | 41nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,580
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 104W (Tc) | N-Channel | - | 30V | 80A (Tc) | 1.2 mOhm @ 80A, 10V | 10V @ 10µA | 41nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,427
In-stock
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 104W (Tc) | N-Channel | - | 30V | 80A (Tc) | 1.2 mOhm @ 80A, 10V | 10V @ 10µA | 41nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±20V | |||
