Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD50N04S408ATMA1
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904
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3-313 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 46W (Tc) N-Channel - 40V 50A (Tc) 7.9 mOhm @ 50A, 10V 4V @ 17µA 22.4nC @ 10V 1780pF @ 6V 10V ±20V
IPD50N04S408ATMA1
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1,331
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3-313 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 46W (Tc) N-Channel - 40V 50A (Tc) 7.9 mOhm @ 50A, 10V 4V @ 17µA 22.4nC @ 10V 1780pF @ 6V 10V ±20V
IPD50N04S408ATMA1
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1,717
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3-313 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 46W (Tc) N-Channel - 40V 50A (Tc) 7.9 mOhm @ 50A, 10V 4V @ 17µA 22.4nC @ 10V 1780pF @ 6V 10V ±20V