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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK14C65W5,S1Q	RFQ VIEW	PDF RFQ	3,899 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A I2PAK		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V
	TK14G65W5,RQ	RFQ VIEW	PDF RFQ	3,205 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A DPAK		DTMOSIV	Active	Digi-Reel®	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V
	TK14G65W5,RQ	RFQ VIEW	PDF RFQ	2,636 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A DPAK		DTMOSIV	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V
	TK14G65W5,RQ	RFQ VIEW	PDF RFQ	1,581 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A DPAK		DTMOSIV	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V
	TK14A65W5,S5X	RFQ VIEW	PDF RFQ	2,870 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	40W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V
	TK14N65W5,S1F	RFQ VIEW	PDF RFQ	2,587 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-247		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V
	TK14E65W5,S1X	RFQ VIEW	PDF RFQ	3,848 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220AB		DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	130W (Tc)	N-Channel	-	650V	13.7A (Ta)	300 mOhm @ 6.9A, 10V	4.5V @ 690µA	40nC @ 10V	1300pF @ 300V	10V	±30V

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