Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 900V 6.9A TO262-3 CoolMOS™ Obsolete - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 104W (Tc) N-Channel - 900V 6.9A (Tc) 800 mOhm @ 4.1A, 10V 3.5V @ 460µA 42nC @ 10V 1100pF @ 100V 10V ±20V
IPW90R800C3FKSA1
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2,325
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Infineon Technologies MOSFET N-CH 900V 6.9A TO-247 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 104W (Tc) N-Channel - 900V 6.9A (Tc) 800 mOhm @ 4.1A, 10V 3.5V @ 460µA 42nC @ 10V 1100pF @ 100V 10V ±20V
IPI90R800C3XKSA1
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3,464
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Infineon Technologies MOSFET N-CH 900V 6.9A TO-262 CoolMOS™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 104W (Tc) N-Channel - 900V 6.9A (Tc) 800 mOhm @ 4.1A, 10V 3.5V @ 460µA 42nC @ 10V 1100pF @ 100V 10V ±20V
IPP90R800C3XKSA1
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615
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Infineon Technologies MOSFET N-CH 900V 6.9A TO-220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 104W (Tc) N-Channel - 900V 6.9A (Tc) 800 mOhm @ 4.1A, 10V 3.5V @ 460µA 42nC @ 10V 1100pF @ 100V 10V ±20V
IPA90R800C3XKSA1
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3,512
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Infineon Technologies MOSFET N-CH 900V 6.9A TO220-3 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 33W (Tc) N-Channel - 900V 6.9A (Tc) 800 mOhm @ 4.1A, 10V 3.5V @ 460µA 42nC @ 10V 1100pF @ 100V 10V ±20V