- Manufacture :
- Series :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,709
In-stock
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ON Semiconductor | FET 100V 1.7 MOHM D2PAK | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | D²PAK (TO-263) | 250W (Tc) | N-Channel | - | 100V | 268A (Tc) | 1.65 mOhm @ 100A, 15V | 4V @ 700µA | 163nC @ 10V | 11600pF @ 50V | 6V, 15V | ±20V | |||
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VIEW |
2,646
In-stock
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ON Semiconductor | MOSFET N-CH 100V 222A TO220F | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 45W (Tc) | N-Channel | - | 100V | 222A (Tc) | 2.3 mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | 11180pF @ 50V | 10V | ±20V | |||
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VIEW |
697
In-stock
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ON Semiconductor | MOSFET N-CH 100V 222A TO220-3 | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 214W (Tc) | N-Channel | - | 100V | 222A (Tc) | 2.3 mOhm @ 100A, 10V | 4V @ 700µA | 152nC @ 10V | 11180pF @ 50V | 10V | ±20V | |||
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VIEW |
961
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 200W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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VIEW |
1,980
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
